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triquint semiconductor www.triquint.com (972)994-8465 fax: (972)994-8504 info-mmw@tqs.com november 2011 ? rev c 1 ku band, 2 watt power amplifier TGA2510-TS key features and performance ? 34 dbm midband psat ? 26 db nominal gain ? 7 db typical input return loss ? 12 db typical output return loss ? 12.5 - 17 ghz frequency range ? directional power detector with reference ? 0.25m phemt 3mi technology ? bias conditions: 7.5v, 650ma ? thermal spreader dimensions: 2.159 x 1.499 mm preliminary measured performance bias conditions: vd=7.5v id=650ma primary applications ? vsat ? point to point note: datasheet is subject to change without notice. www.datasheet.net/ datasheet pdf - http://www..co.kr/
triquint semiconductor www.triquint.com (972)994-8465 fax: (972)994-8504 info-mmw@tqs.com november 2011 ? rev c 2 TGA2510-TS table i absolute maximum ratings symbol parameter value notes v d drain voltage 8 v 1 / 2 / v g gate voltage range -5v to 0v 1 / i d drain supply current 1300 ma 1 / 2 / | i g | gate supply current 18 ma 1 / p in input continuous wave power 24 dbm 1 / 2 / p d power dissipation 10.4 w 1 / 2 / t ch operating channel temperature 200 0 c 3 / t m mounting temperature (30 seconds) 320 0 c t stg storage temperature -65 to 150 0 c 1 / these ratings represent the maximum operable values for this device 2 / combinations of supply voltage, supply current, input power, and output power shall not exceed p d at a package base temperature of 70 c 3 / junction operating temperature will directly affect the device median lifetime. for maximum life, it is recommended that channel temperatures be maintained at the lowest possible levels. table ii recommended operating conditions symbol parameter value vd drain voltage 7.5 v id drain current 650 ma id_drive drain current under rf drive 1200 ma vg3, vg4 gate voltage -0.65 v typical www.datasheet.net/ datasheet pdf - http://www..co.kr/
triquint semiconductor www.triquint.com (972)994-8465 fax: (972)994-8504 info-mmw@tqs.com november 2011 ? rev c 3 table iii rf characterization table (t a = 25 c, nominal) (vd = 7.5v, idq = 650ma 5%) symbol parameter test conditions typ units notes gain small signal gain f = 12.5 ? 17 ghz 26 db irl input return loss f = 12.5 ? 17 ghz 7 db orl output return loss f = 12.5 ? 17 ghz 12 db pwr output power @ pin = +15dbm f = 12.5 ? 17 ghz 34.0 dbm pae power added efficiency @ pin=+15dbm f = 12.5 ? 17 ghz 31 % table iv thermal information parameter test conditions t ch ( c) jc ( c/w) tm (hrs) jc thermal resistance (channel to backside of carrier) v d = 7.5v i d = 650ma p diss = 4.88w t base = 70 c 130.7 12.44 5.5e+6 note: assumes eutectic attach using 1.5mil 80/20 ausn mounted to a 20mil cumo carrier at 70 c baseplate temperature. worst case conditions with no rf applied, 100% of dc power is dissipated. TGA2510-TS www.datasheet.net/ datasheet pdf - http://www..co.kr/
triquint semiconductor www.triquint.com (972)994-8465 fax: (972)994-8504 info-mmw@tqs.com november 2011 ? rev c 4 typical fixtured performance idq=650ma TGA2510-TS www.datasheet.net/ datasheet pdf - http://www..co.kr/
triquint semiconductor www.triquint.com (972)994-8465 fax: (972)994-8504 info-mmw@tqs.com november 2011 ? rev c 5 typical fixtured performance idq=650ma TGA2510-TS www.datasheet.net/ datasheet pdf - http://www..co.kr/
triquint semiconductor www.triquint.com (972)994-8465 fax: (972)994-8504 info-mmw@tqs.com november 2011 ? rev c 6 typical fixtured performance idq=650ma TGA2510-TS www.datasheet.net/ datasheet pdf - http://www..co.kr/
triquint semiconductor www.triquint.com (972)994-8465 fax: (972)994-8504 info-mmw@tqs.com november 2011 ? rev c 7 typical fixtured performance idq=650ma TGA2510-TS www.datasheet.net/ datasheet pdf - http://www..co.kr/
triquint semiconductor www.triquint.com (972)994-8465 fax: (972)994-8504 info-mmw@tqs.com november 2011 ? rev c 8 mechanical drawing TGA2510-TS .00 [0.000] .09 [0.004] .37 [0.014] .49 [0.019] .84 [0.033] .77 [0.030] 1.81 [0.071] 1.93 [0.076] 2.02 [0.080] .00 [0.000] .69 [0.027] .09 [0.004] .69 [0.027] 1.28 [0.050] 1.29 [0.051] 1.38 [0.054] 1 2 3 4 5 6 7 8 units: millimeters [inches] thickness: 0.10 [0.004] (reference only) chip edge to bond pad dimensions are shown to center of bond pads. chip size toleran ce: 0.05 [0.002] rf ground through backside bond pad #1 bond pad #2 bond pad #3 bond pad #4 bond pad #5 bond pad #6 bond pad #7 bond pad #8 rf input vref vd3 vd4 rf output vdet vg4 vg3 0.10 x 0.20 0.10 x 0.10 0.10 x 0.20 0.20 x 0.13 0.10 x 0.20 0.10 x 0.10 0.10 x 0.10 0.10 x 0.10 [0.004 x 0.008] [0.004 x 0.004] [0.004 x 0.008] [0.008 x 0.005] [0.004 x 0.008] [0.004 x 0.004] [0.004 x 0.004] [0.004 x 0.004] www.datasheet.net/ datasheet pdf - http://www..co.kr/
triquint semiconductor www.triquint.com (972)994-8465 fax: (972)994-8504 info-mmw@tqs.com november 2011 ? rev c 9 mechanical drawing tga2510 on thermal spreader TGA2510-TS notes: 1. dimensions are in mm[inches]. 2. dimension limits apply after plating. 3. dimension of surface roughness is in micrometer(microinch). 4. tolerances unless otherwise stat ed +0.075, - 0.025 [+0.003, -0.001] 5. thermal spreader material: copper and molybdenum metal matrix material (amc8515) with a cte of 7.0 ppm/c. 6. plating: gold (au) 1.27-2.54 um per astm b 488, type 1, code a. over nickel (ni) 2.5-7.5 um per qq-n-290, class 1. 7. mmic is attached to thermal spreader using ausn solder. www.datasheet.net/ datasheet pdf - http://www..co.kr/
triquint semiconductor www.triquint.com (972)994-8465 fax: (972)994-8504 info-mmw@tqs.com november 2011 ? rev c 10 40k 40k +5v vdet vref 50 rf out dut 5pf chip external power detector TGA2510-TS www.datasheet.net/ datasheet pdf - http://www..co.kr/
triquint semiconductor www.triquint.com (972)994-8465 fax: (972)994-8504 info-mmw@tqs.com november 2011 ? rev c 11 chip assembly & bonding diagram gaas mmic devices are susceptible to damage from electrostatic discharge . proper precautions should be observed during handling, assembly and test. 100pf vg input tfn output tfn 100pf vd off chip r=10 off chip c=0.1 f off chip r=10 off chip c=0.1 f TGA2510-TS www.datasheet.net/ datasheet pdf - http://www..co.kr/
triquint semiconductor www.triquint.com (972)994-8465 fax: (972)994-8504 info-mmw@tqs.com november 2011 ? rev c 12 gaas mmic devices are susceptible to damage from electrostatic discharge . proper precautions should be observed during handling, assembly and test. component storage placement and adhesive attachment assembly notes: ? vacuum pencils and/or vacuum collets are the preferred method of pick up. ? air bridges must be avoided during placement. ? the force impact is critical during auto placement. ? attachment of the thermal spreader should use an epoxy with high thermal conductivity. ? curing should be done in a convection oven. ? microwave or radiant curing should not be used because of differential heating. interconnect process assembly notes: ? thermosonic ball bonding is the preferred interconnect technique. ? force, time, and ultrasonics are critical parameters. ? aluminum wire should not be used. ? devices with small pad sizes should be bonded with 0.0007-inch wire. ? maximum stage termperature is 200 c. assembly process notes TGA2510-TS ordering information part package style TGA2510-TS gaas mmic die on thermal spreader www.datasheet.net/ datasheet pdf - http://www..co.kr/

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